Publication

Intelligent Memory Computing Device Laboratory

Journal

# means first author, * means corresponding author.

Total 59건 1 페이지
  • 2026

  • 59

    "Investigation of Buried Channel Array Transistor for High-Voltage Pass Transistor in 3D NAND Flash memory"

    Hyeun Woo Shin#, Namju Kim#, Suk-Kang Sung, Byung Chul Jang*, IEEE Transactions on Eelectron Devices, (under revision) (2026) [IF:2.9]

  • 58

    "A Novel Read disturbance-free AND-type Backside Ferroelectric Field Effect Transistor (BF-FET) array for Read-intensive Artificial Intelligence"

    Jaejoong Jeong, Yeeun Kim, Youngkeun Park, Yeong Kwon Kim, Byung Chul Jang, Jong Kyung Park, Byung Jin Cho*, IEEE Transactions on Eelectron Devices, (2026) [IF:2.9]

  • 57

    "Investigation of Buried Channel Array Transistor as a Scalable High-Voltage Pass Transistor for 3-D NAND Flash Memory"

    Chae Eun Kim#, Namju Kim#, Suk-Kang Sung, Byung Chul Jang*, IEEE Transactions on Device and Materials Reliability, (2026) [IF:2.3]

  • 56

    "Indium tin oxide vertical channel transistors for scaled 4F2 2T0C gain cell memory with etched sidewall cleaning"

    Hyeonho Gu#, Haksoon Jung#, Minho Park, Hyeonjin Lee, Ae Rim Choi, Il-Kwon Oh, Yanfeng Zhao, Byungjo Kim, Jungsik Kim, Byung Chul Jang, Yongwoo Lee, Jimin Kwon, IEEE Electron Device Letters, (2026) [IF:4.5]

  • 55

    "Vander Waals Ferroelectric CuInP2S6-based Multi-slope In-memory Probabilistic Computing"

    Changyoung Kim#, Namju Kim#, Seongkweon Kang, Chang Yong Park, Sang-Min Lee, Cheolhwa Jang, Ji-Sang Park, Byung Chul Jang*, Sungjoo Lee*, Advanced Materials, (2026) [IF:26.8]

  • 54

    "Light-Induced Entropy for Secure Vision"

    Juhyung Seo#, Seungme Kang#, Chaehyun Kim#, Taehyun Park#, Youngwoo Yoo, Yeong Kwon Kim, Wonjun Shin, Byung Chul Jang*, Young-Joon Kim*, Hocheon Yoo*, Advanced Materials, (2026) [IF:26.8]

  • 53

    "Timing-Dependent Spiking Neural Network: Board-Level Hardware Implementation with Photoelectroactive Van der Waals Synapses"

    Seongjun Kim#, Jeong-Ick Cho#, Sungsoo Lee#, Yoonchul Shin, Je-Jun Lee, Sanghyun Lee, Kwanghee Ko, Juncheol Kang, Junseo Lee, Matthew T. Flavin, Dong-Ho Kang, Byung Chul Jang, Ji-Hoon Ahn, Yoonmyung Lee, Sang Min Won*, Jin-Hong Park*, Seyong Oh*, Advanced Materials, (2026) [IF:26.8]

  • 52

    "A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post-Synaptic Current for Highly Accurate Spiking Neural Networks"

    Hyejin Yoon#, Soeun Park#, Yeong Kwon Kim#, Juhwan Baek, Ki Han Kim, Jeongeun Choi, Seongil Yun, Hyeonchang Son, Jeongeun Choi, Byung Chul Jang*, Dong-Ho Kang*, Advanced Functional Materials, 36, e19498, (2026) [IF:19.0] [Inside Front Cover]

  • 2025

  • 51

    "Ultrahigh-Yield, Multifunctional, and High-Performance Organic Memory for Seamless In-Sensor Computing Operation"

    Daeun Kim#, Jaehyoung Ko#, Namju Kim#, Quynh H. Nguyen, Hoyeon Lee, Joohwan Eo, Seongeon Jin, Ji Eon Kwon, Seung-Yeol Jeon, Youngdo Jeong, Dongseok Kwon, Sung Gap Im, Sanghan Lee*, Byung Chul Jang*, Yongho Joo*, Advanced Functional Materials, e16603 (2025) [IF:19.0]

  • 50

    "Advanced Optical Physical Unclonable Functions based on Förster Resonant Energy Transfer in Multi-Color Quantum Dots on Nanopatterned Films"

    Kisu Kim, Yuhyun Moon, Yeong Kwon Kim, Sangho Shin, J. Cheng Bi, Joo Yun Jung, Byung Chul Jang*, Byeong-Kwon Ju*, Communications Materials, 6, 270 (2025) [IF:9.6]

  • 49

    "Reconfigurable Neuron and Synapse Operations in a Steep-Switching Nonvolatile Transistor"

    Jongmin Noh#, Young Kwon Kim#, Seongkweon Kang, Sang-Min Lee, Byung Chul Jang*, Sungjoo Lee*, Small, 21, e05649 (2025) [IF:12.1]

  • 48

    "More-than-Moore approaches implemented using the unique properties of van der Waals heterostructures"

    Sangmin Lee#, Yeong Kwon Kim#, Byung Chul Jang*, Sungjoo Lee*, ACS Nano, 19, 29028−29048 (2025) [IF:16.0]

  • 47

    "Modeling of Conductive Filament Behaviors According to Inorganic Concentration Changes in Hybrid Polymeric Ultra-Thin Films"

    Ji In Kim#, Yeong Kwon Kim#, Byung Chul Jang*, Min Ju Kim*, ACS Applied Electronic Materials, 7, 5451-5462 (2025) [IF:4.4]

  • 46

    "Steep-Slope CuInP2S6 Ferroionic Threshold Switching Field-Effect Transistor for Implementation of Artificial Spiking Neuron"

    Sungpyo Baek#, Young Kwon Kim#, Sang-Min Lee, HaeJu Choi, Ji-Sang Park, Byung Chul Jang*, and Sungjoo Lee*, Advanced Materials, 37, e06921 (2025) [IF:26.8]

  • 45

    "MoS2 Channel-Enhanced High-Density Charge Trap Flash Memory and Machine Learning-Assisted Sensing Methodologies for Memory-Centric Computing Systems"

    Ki Han Kim#, Ju Han Park#, Khang June Lee#, Ji-Won Seo, Yeong Kwon Kim, Junhwan Choi, Min-Jae Seo*, and Byung Chul Jang*, Advanced Science, 12, e01926 (2025) [IF:14.3]

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