Non-volatile flash memory based on van der Waals gate stack using bandgap tunability of hexagonal boron nitride Author Byung Chul Jang Co-author Hamin Park Journal Surfaces and Interfaces Vol 32 Page 102179 (2022) [IF:6.2] Year 2022 Link https://www.sciencedirect.com/science/article/pii/S2468023022004473 213회 연결 Byung Chul Jang and Hamin Park*, “Non-volatile flash memory based on van der Waals gate stack using bandgap tunability of hexagonal boron nitride” Surfaces and Interfaces, 32, 102179 (2022) [IF:6.2] 목록 이전글Memristor-based Security Primitives Robust to Malicious Attacks for Highly Secure Neuromorphic Systems 24.03.14 다음글A low-voltage organic complementary inverter with high operation stability and flexibility using ultrathin iCVD polymer dielectric and hybrid encapsulation layer 24.03.14