Low-Power Charge Trap Flash Memory with MoS2 Channel for High-Density In-Memory Computing > Journal | Intelligent Memory Computing Device Laboratory

Publication

Intelligent Memory Computing Device Laboratory

Journal

Low-Power Charge Trap Flash Memory with MoS2 Channel for High-Density In-Memory Computing

Author: Yeong Kwon Kim#, Sangyong Park#, Junhwan Choi, Hamin Park*, Byung Chul Jang*

Journal: Advanced Functional Materials

Page: 36, 2405670 (2024) [IF:18.5]

Year: 2024

Link: https://doi.org/10.1002/adfm.202405670 128회 연결

Low-Power Charge Trap Flash Memory with MoS2 Channel for High-Density In-Memory Computing

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