"Quantitative Modeling of the Endurance Degradation for Nand Flash Memory"

Han Byeol Oh, Byung Chul Jang, The 31th Korean Conference on Semiconductors, Gyeongju , Korea
January 24 (2024)

"Vertical Side-Wall MoS2 Channel Transistors : Thickness of 0.65nm and 6.5nm"

Ki Han Kim, Huimin Lee, Joonki Suh, and Byung Chul Jang, The 31th Korean Conference on Semiconductors, Gyeongju , Korea
January 24 (2024)

"A physics-based Numerical Model for Potentiation/Depression Characteristics of Electrochemical Metallization Memristor"

Yeongkwon Kim, Byung Chul Jang, The 31th Korean Conference on Semiconductors, Gyeongju , Korea
January 24 (2024)

"True Random Number Generator Based on Memristor Array for Medical Imnage Synthesis Using Generative Network"

Namju Kim , Byung Chul Jang, The 31th Korean Conference on Semiconductors, Gyeongju , Korea
January 24 (2024)

"Functional memristive integrated circuitry on plastic substrate toward energy-efficient electronic systems"

Byung Chul Jang, Yunyong Nam, Khan June Lee, June Hwe Cha, Tae Gyu Kang, Sang-Hee Ko Park, Sung-Yool Choi, The 25th Korean Conference on Semiconductors, Gangwon , Korea
February 05 (2018)

"CVD-grown MoS2-based charge storage nonvolatile memory with high-k polymer dielectric"

Sangcheol Yang, Byung chul Jang, Gi Woong Shim, Junhwan Choi, Sung Gap Im,and Sung-Yool Choi, The 4th Korean Graphene Symposium,
2017.04.06

"Multilevel resistive switching memory based on MoS2 embedded graphene oxide"

Gwang Hyuk Shin, Choong-Ki Kim, Gyeong Sook Bang, Byung Chul Jang, Yang-Kyu Choi, and Sung-Yool Choi, The 4th Korean Graphene Symposium,
2017.04.06

"Floating gate memory based on MoS2 channel and iCVD polymer dielectric with metal nanoparticle charge trapping layer"

Myung Hun Woo, Byung Chul Jang, Junhwan Choi, Gwang Hyuk Shin, Hyejeong Seong, Sung Gap Im, and Sung-Yool Choi, The 3rd Korean Graphene Symposium,
2016.04.14

"Highly uniform, low power polymer memory via interface engineering using multilayer graphene barrier electrode"

Byung Chul Jang, Hyejeong Seong, Jong Yun Kim, Beom Jun Koo, Sung Kyu Kim, Sang Yoon Yang, Sung Gap Im, and Sung-Yool Choi, The 23rd Korean Conference on Semiconductors,
2016.02.22

"Metal nanoparticle embedded floating gate memory based on MoS2 with polymer tunneling dielectric layer"

Myung Hun Woo, Byung Chul Jang, Junhwan Choi, Gwang Hyuk Shin, Hyejeong Seong, Sung Gap Im, and Sung-Yool Choi, The 23rd Korean Conference on Semiconductors,
2016.02.22

"Multilevel Resistive Switching Memory based on Two-Dimensional (2D) Nanomaterials"

Gwang Hyuk Shin, Byung Chul Jang, Myung Hun Woo, and Sung-Yool Choi, The 23rd Korean Conference on Semiconductors,
2016.02.22

"Electrode dependence of unipolar resistive switching behavior in graphene oxide resistive switching memory"

Beom Jun Koo, Jong Yun Kim, Byung Chul Jang, Khang June Lee, Gwang Hyuk Shin, Sung-Yool Choi, The 2st Korean Graphene Symposium,
2015.03.26

"Highly uniform and reliable RRAM based on iCVD polymer using multilayer graphene barrier electrode"

Byung Chul Jang, Hyejeong Seong, Jong Yun Kim, Beom Jun Koo, Sung Gap Im, Sung-Yool Choi, The 1st Korean Graphene Symposium,
2014.04.03

"Impact of Removing the Dummy Channel Holes for High-density 3D NAND Flash memory"

Hee Seung Kim, Byung Chul Jang, The 21th International Symposium on the Physics of Semiconductors and Applications(ISPSA) 2024, Jeju, Korea
2024.06.02

"Quantitative Modeling of the Endurance Deragdation for NAND Flash Memory"

Han Byeol Oh, Byung Chul Jang, The 21th International Symposium on the Physics of Semiconductors and Applications(ISPSA) 2024, Jeju, koera
2024.06.02