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Intelligent Memory Computing
Device Laboratory

We are looking for highly motivated M.S./Ph.D. students who have interests in the nanoscale
semiconductor device for memory, logic, and neuromorphic computing application.

Research Topics

  • Memory device and process

    Research Topic 01

  • Neuromorphic device and system for AI

    Research Topic 02

  • Emerging device and AI algorithm for novel applicaiton

    Research Topic 03

Publication

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    2026

    Recessed Source/Drain Transistor for Next-Generation Scalable High-Voltage Pass Transistor in 3D NAND Flash memory

    Chae Eun Kim#, Namju Kim#, Suk-Kang Sung, Byung Chul Jang*, IEEE Transactions on Eelectron Devices, (under revision) (2026) [IF:3.6]

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    2026

    A Novel Read disturbance-free AND-type Backside Ferroelectric Field Effect Transistor (BF-FET) array for Read-intensive Artificial Intelligence

    Jaejoong Jeong, Yeeun Kim, Youngkeun Park, Yeong Kwon Kim, Byung Chul Jang, Jong Kyung Park, Byung Jin Cho*, IEEE Transactions on Electron Devices, (2026) [IF:3.6]

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    2026

    Investigation of Buried Channel Array Transistor as a Scalable High-Voltage Pass Transistor for 3-D NAND Flash Memory

    Hyeun Woo Shin#, Namju Kim#, Suk-Kang Sung, Byung Chul Jang*, IEEE Transactions on Device and Materials Reliability, 26, 328-333, (2026) [IF:2.7]

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    2026

    Indium tin oxide vertical channel transistors for scaled 4F2 2T0C gain cell memory with etched sidewall cleaning

    Hyeonho Gu#, Haksoon Jung#, Minho Park, Hyeonjin Lee, Ae Rim Choi, Il-Kwon Oh, Yanfeng Zhao, Byungjo Kim, Jungsik Kim, Byung Chul Jang, Yongwoo Lee, Jimin Kwon, IEEE Electron Device Letters, (2026) [IF:4.6]

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    2026

    Vander Waals Ferroelectric CuInP2S6-based Multi-slope In-memory Probabilistic Computing

    Changyoung Kim#, Namju Kim#, Seongkweon Kang, Chang Yong Park, Sang-Min Lee, Cheolhwa Jang, Ji-Sang Park, Byung Chul Jang*, Sungjoo Lee*, Advanced Materials, (2026) [IF:29.1]

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    2026

    Light-Induced Entropy for Secure Vision

    Juhyung Seo#, Seungme Kang#, Chaehyun Kim#, Taehyun Park#, Youngwoo Yoo, Yeong Kwon Kim, Wonjun Shin, Byung Chul Jang*, Young-Joon Kim*, Hocheon Yoo*, Advanced Materials, (2026) [IF:29.1]

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    2026

    Timing-Dependent Spiking Neural Network: Board-Level Hardware Implementation with Photoelectroactive Van der Waals Synapses

    Seongjun Kim#, Jeong-Ick Cho#, Sungsoo Lee#, Yoonchul Shin, Je-Jun Lee, Sanghyun Lee, Kwanghee Ko, Juncheol Kang, Junseo Lee, Matthew T. Flavin, Dong-Ho Kang, Byung Chul Jang, Ji-Hoon Ahn, Yoonmyung Lee, Sang Min Won*, Jin-Hong Park*, Seyong Oh*, Advanced Materials, (2026) [IF:29.1]

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    2025

    Ultrahigh-Yield, Multifunctional, and High-Performance Organic Memory for Seamless In-Sensor Computing Operation

    Daeun Kim#, Jaehyoung Ko#, Namju Kim#, Quynh H. Nguyen, Hoyeon Lee, Joohwan Eo, Seongeon Jin, Ji Eon Kwon, Seung-Yeol Jeon, Youngdo Jeong, Dongseok Kwon, Sung Gap Im, Sanghan Lee*, Byung Chul Jang*, Yongho Joo*, Advanced Functional Materials, e16603 (2025) [IF:19.0]

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    2025

    Advanced Optical Physical Unclonable Functions based on Förster Resonant Energy Transfer in Multi-Color Quantum Dots on Nanopatterned Films

    Kisu Kim, Yuhyun Moon, Yeong Kwon Kim, Sangho Shin, J. Cheng Bi, Joo Yun Jung, Byung Chul Jang*, Byeong-Kwon Ju*, Communications Materials, 6, 270 (2025) [IF:9.6]

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    2026

    A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post-Synaptic Current for Highly Accurate Spiking Neural Networks

    Hyejin Yoon#, Soeun Park#, Yeong Kwon Kim#, Juhwan Baek, Ki Han Kim, Jeongeun Choi, Seongil Yun, Hyeonchang Son, Jeongeun Choi, Byung Chul Jang*, Dong-Ho Kang*, Advanced Functional Materials, 36, e19498, (2026) [IF:19.9] [Inside Front Cover]

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    2025

    Reconfigurable Neuron and Synapse Operations in a Steep-Switching Nonvolatile Transistor

    Jongmin Noh#, Young Kwon Kim#, Seongkweon Kang, Sang-Min Lee, Byung Chul Jang*, Sungjoo Lee*, Small, 21, e05649 (2025) [IF:12.1]

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    2025

    More-than-Moore approaches implemented using the unique properties of van der Waals heterostructures

    Sangmin Lee#, Yeong Kwon Kim#, Byung Chul Jang*, Sungjoo Lee*, ACS Nano, 19, 29028−29048 (2025) [IF:16.0]

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    2025

    Modeling of Conductive Filament Behaviors According to Inorganic Concentration Changes in Hybrid Polymeric Ultra-Thin Films

    Ji In Kim#, Yeong Kwon Kim#, Byung Chul Jang*, Min Ju Kim*, ACS Applied Electronic Materials, 7, 5451-5462 (2025) [IF:4.4]

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    2025

    Steep-Slope CuInP2S6 Ferroionic Threshold Switching Field-Effect Transistor for Implementation of Artificial Spiking Neuron

    Sungpyo Baek#, Young Kwon Kim#, Sang-Min Lee, HaeJu Choi, Ji-Sang Park, Byung Chul Jang*, and Sungjoo Lee*, Advanced Materials, 37, e06921 (2025) [IF:26.8]

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    2025

    MoS2 Channel-Enhanced High-Density Charge Trap Flash Memory and Machine Learning-Assisted Sensing Methodologies for Memory-Centric Computing Systems

    Ki Han Kim#, Ju Han Park#, Khang June Lee#, Ji-Won Seo, Yeong Kwon Kim, Junhwan Choi, Min-Jae Seo*, and Byung Chul Jang*, Advanced Science, 12, e01926 (2025) [IF:14.3]

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    2025

    Quantized-memristor-enabled generative AI for predictive skin laser treatment imaging

    Namju Kim#, Jun-Hwe Cha#, Yeong Kwon Kim#, Inyong Kim, Minkyu Jeong, Junhwan Choi, and Byung Chul Jang*, Device [Cell press's sister journal], 3, 100908 (2025)

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    2025

    Ultrafast and Universal Synthetic Route for Nanostructured Transition Metal Oxides Directly Grown on Substrates

    Si Heon Lim, Geunwoo Kim, Sungjin Cho, Yeong Kwon Kim, Eun Bee Ko, Seon Yeon Choi, Jung A Heo, Daegun Kim, Hocheon Yoo, So‐Yeon Lee, YongJoo Kim, Pil‐Ryung Cha, Dong Yun Lee, Sunghun Lee, Byung Chul Jang, Yeonhoo Kim, Hyun Ho Kim*, Advanced Materials, 37, 2418407, (2025) [IF:26.8]

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    2025

    Rolling the dice with light competition: Introducing a true random number generator powered by photo-induced polarity current

    Taehyun Park#, Juhyung Seo#, Namju Kim#, Chaehyun Kim#, Yeong Jae Kim, Hyeonghun Kim, Hyun Ho Kim, Seyong Oh, Dong Chan Kim, Donghee Son, Jaehyun Hur*, Young-Joon Kim*, Byung Chul Jang*, Hocheon Yoo*, Advanced Materials, 37, 2419579, (2025) [IF:26.8] [Inside Front Cover]

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    2024

    Enhancing Computing Capacity via Reconfigurable MoS2-Based Artificial Synapse with Dual Feature Strategy for Wide Reservoir Computing

    Hyeonji Lee#, Jungyeop Oh#, Wonbae Ahn, Mingu Kang, Seohak Park, Hyunmin Kim, Seungsun Yoo, Byung Chul Jang, Sung-Yool Choi, Advanced Functional Materials, 35, 2416811, (2024) [IF:18.5]

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    2024

    Random Number Generators and Spiking Neurons from Metal Oxide/Small Molecules Heterojunction N-shape Switching Transistors

    Juhyung Seo#, Seungme Kang#, Divake Kumar#, Wonjun Shin#, Jinill Cho, Taesung Kim, Yeongkwon Kim, Byung Chul Jang, Amit R. Trivedi, Hocheon Yoo, Advanced Functional Materials, 35, 2411348, (2024) [IF:18.5]

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    2025

    Material engineering to enhance reliability in 3D NAND flash memory

    Ki Han Kim#, Namju Kim#, Yeong Kwon Kim#, Hee Seung Kim, Han Byeol Oh, Chae Eun Kim, Hyeun Woo Shin, Myeong Gi Kim, Won Jun Choi, Byung Chul Jang*, Device [Cell press's sister journal], 3, 100682 (2025)

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    2025

    Spiking neural network integrated with impact ionization field-effect transistor neuron and a ferroelectric field-effect transistor synapse

    Haeju Choi, Sungpyo Baek, Hanggyo Jung, Taeho Kang, Sangmin Lee, Jongwook Jeon, Byung Chul Jang*, Sungjoo Lee*, Advanced Materials, 37, 2406970 (2025) [IF:26.8]

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    2024

    A Nonconjugated Radical Polymer Enables Bimodal Memory and In-Sensor Computing Operation

    Jaehyoung Ko, Daeun Kim, Quynh H. Nguyen, Changhyeon Lee, Namju Kim, Byung Chul Jang*, Sung Gap Im*, Yongho Joo*, Science Advances, 10, eadp0778 (2024) [IF:11.7]

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    2024

    Dual Synapses from Ternary C60-Pentacene-TiO2-x Nanorods Heterostructures

    Yunchae Jeon#, Gyeongho Lee#, Yeong Jae Kim, Byung Chul Jang*, Hocheon Yoo*, Advanced Functional Materials, 34, 24095780(2024) [IF:18.5]

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    2024

    Versatile Papertronics: Photo-induced Synapse and Security Applications on a Papers

    Wangmyung Choi#, Jihyun Shin#, Yeong Jae Kim, Jaehyun Hur, Byung Chul Jang*, Hocheon Yoo*, Advanced Materials, 36, 2312831 (2024) [IF: 27.4] [Inside Front Cover]

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    2024

    Low-Power Charge Trap Flash Memory with MoS2 Channel for High-Density In-Memory Computing

    Yeong Kwon Kim#, Sangyong Park#, Junhwan Choi, Hamin Park*, Byung Chul Jang*, Advanced Functional Materials, 36, 2405670 (2024) [IF:18.5]

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    2024

    Nanoristors: Highly Uniform, Sub-500-Millivolt, Large-Scale, and Robust Molybdenum Disulfide Nanograined Memristor

    Gunhoo Woo#, Hyeong-U Kim#, Byung Chul Jang#, Muhammad Naqi, Seongin Hong, Arindam Bala, Seunghun Kang, Yunseok Kim, Sunkook kim, Taesung Kim, Jae-Joon Kim*, Hocheon Yoo*, Journal of Materials Chemistry C, 12, 6350-6358 (2024) [IF:5.7]

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    2021~

    Flexible Nonvolatile Polymer Memory Array on Plastic Substrate via Initiated Chemical Vapor Deposition

    Byung Chul Jang#, Hyejeong Seong#, Sung Kyu Kim, Jong Yun Kim, Beom Jun Koo, Junhwan Choi, Sang Yoon Yang, Sung Gap Im*, Sung-Yool Choi*, ACS Applied Materials & Interfaces, 8, 12951-12958 (2016) [IF:10.383]

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    2021~

    Conductive-bridging random-access memories for emerging neuromorphic computing

    Jun-Hwe Cha, Sang Yoon Yang, Jungyeop Oh, Shinhyun Choi, Sangsu Park, Byung Chul Jang, Wonbae Ahn, Sung-Yool Choi, Nanoscale, 12, 14301-14930 (2020) [IF:6.307] [Inside Front Cover]

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    2021~

    Bioinspired Polydopamine‐Based Resistive‐Switching Memory on Cotton Fabric for Wearable Neuromorphic Device Applications

    Hagyoul Bae, Daewon Kim, Myungsoo Seo, Ik Kyeong Jin, Seung‐Bae Jeon, Hye Moon Lee, Soo‐Ho Jung, Byung Chul Jang, Gyeongho Son, Kyoungsik Yu, Sung‐Yool Choi, Yang‐Kyu Choi, Advanced Materials Technologies, 4, 1900151 (2019) [IF:8.856]

Our News

  • 17

    2026.05

    석사과정 신현우, 삼성전자와의 공동 연구로 SCI 논문 게제 (IEEE Transactions on Device and Materials Reliability)

    석사과정 신현우 학생의 삼성전자와의 공동 연구로 "Investigation of Buried Channel Array Transistor as a Scalable High-Voltage Pass Transistor for 3-D NAND Flash Memory" 제목으로 IEEE Transactions on Device and Materials Reliab…

  • 17

    2026.05

    오한별 석사 한국산업기술기획평가원 취업 (2026년)

    산업기술개발에 대한 기획, 평가, 관리 등의 사업을 수행함으로써 산업기술의 혁신을 통한 산업경쟁력과 국가혁신역량 제고에 기여할 목적으로 설립된 대한민국 산업통상부 산하 위탁집행형 공공기관인 한국산업기술기획평가원으로의 오한별 석사의 취업을 축하합니다.

  • 17

    2026.05

    박사과정 김남주, 석사과정 신현우, 삼성전자&Applied Materials와의 공동 연구로 2026 IEEE IRPS 반도체 신뢰성 학회 체택

    IEEE IRPS는 반도체 소자, 공정과 반도체 IC의 reliability technology 및 신뢰성 modeling에 관한 세계 최대의 국제 학회입니다. 박사과정 김남주 학생과 석사과정 신현우 학생의 공동 1저자로 기여한 "Scalable High-Voltage Pass Transistor Structures: Physics-based and V…

Research Highlights

  • 2026A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post-Synaptic Current for Highly Accurate Spiking Neural Networks

    Hyejin Yoon#, Soeun Park#, Yeong Kwon Kim#, Juhwan Baek, Ki Han Kim, Jeongeun Choi, Seongil Yun, Hyeonchang Son, Jeongeun Choi, Byung Chul Jang*, Dong-Ho Kang*, Advanced Functional Materials, 36, e19498, (2026) [IF:19.0] [Inside Front Cover]

  • 2026Unified Numerical Modeling of Program Efficiency in 3D NAND Flash: An Enabler for Design Optimization of Advanced 3D NAND Architecture

    Ki Han Kim, Woo Cheol Shin, Chae Eun Kim, Yoohyun Noh, Ju-Yeob Lee, Sang Hyun Oh, Byung Chul Jang*, IEEE International Reliability Physics Symposium (IRPS), Tucson, USA, (2026)